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 DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BAV99S High-speed switching diode array
Product specification Supersedes data of 2001 Mar 02 2001 May 14
Philips Semiconductors
Product specification
High-speed switching diode array
FEATURES * Small plastic SMD package * High switching speed * Two electrically isolated series configuration arrays * Low capacitance. APPLICATIONS * General purpose switching in e.g. surface mounted circuits. * Rail to rail (ESD) protection.
6 5 4 6 5
BAV99S
PINNING PIN 1 2 3 4 5 6 anode (a1) cathode (k2) cathode (k3)/anode (a4) anode (a3) cathode (k4) cathode (k1)/anode (a2) DESCRIPTION
DESCRIPTION The BAV99S consists of four single die high speed switching diodes in two electrically isolated series configurations, encapsulated in the small SMD SC-88 (SOT363) plastic package.
4
1 Top view
2
3
MSA370
1
2
3
MBL211
Marking code: K1.
Fig.1
Simplified outline (SC-88; SOT363) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Solder points at pins: 2, 3, 5 and 6. total power dissipation storage temperature junction temperature Ts 85 C; note 1 - - - - -65 -65 4.5 1 0.5 250 +150 +150 A A A mW C C - - - - 85 75 200 450 V V mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
2001 May 14
2
Philips Semiconductors
Product specification
High-speed switching diode array
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 75 V VR = 25 V; Tj = 150 C VR = 75 V; Tj = 150 C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage VR = 0; f = 1 MHz; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched to IF = 10 mA; tr = 20 ns; see Fig.8 1 30 50 1.5 4 1.75 715 855 1 1.25 PARAMETER CONDITIONS
BAV99S
MAX.
UNIT
mV mV V V A A A pF ns V
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Solder points at pins: 2, 3, 5 and 6. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 260 UNIT K/W
2001 May 14
3
Philips Semiconductors
Product specification
High-speed switching diode array
GRAPHICAL DATA
BAV99S
handbook, halfpage
250
MGW102
handbook, halfpage
300
MBG382
I Fmax (mA)
200
IF (mA)
(1) (2) (3)
200 150
100 100 50
0 0 50 100 Ts (C) 150
0
0
1
VF (V)
2
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Fig.2
Maximum permissible continuous forward current as a function of soldering point temperature.
Fig.3
Forward current as a function of forward voltage.
handbook, full pagewidth
10
MGW103
I FSM (A)
1
10 -1 1 10
102
103
t p (s)
104
Based on square wave currents. Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2001 May 14
4
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
105 IR (nA) 10
4
MGA884
handbook, halfpage
0.8
MBG446
Cd (pF) V R = 75 V 0.6
103
max
75 V 0.4
10
2
25 V 0.2 typ typ
10
0
100
T j ( o C)
200
0 0 4 8 12 VR (V) 16
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
2001 May 14
5
Philips Semiconductors
Product specification
High-speed switching diode array
BAV99S
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05. Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R = 50 S
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
2001 May 14
6
Philips Semiconductors
Product specification
High-speed switching diode array
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BAV99S
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2001 May 14
7
Philips Semiconductors
Product specification
High-speed switching diode array
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BAV99S
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 May 14
8
Philips Semiconductors
Product specification
High-speed switching diode array
NOTES
BAV99S
2001 May 14
9
Philips Semiconductors
Product specification
High-speed switching diode array
NOTES
BAV99S
2001 May 14
10
Philips Semiconductors
Product specification
High-speed switching diode array
NOTES
BAV99S
2001 May 14
11
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2001
Internet: http://www.semiconductors.philips.com
SCA 72
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp12
Date of release: 2001
May 14
Document order number:
9397 750 08226


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